QED234A4R0【PDF 2/4 页】LED IR EMITTING ALGAAS 940NM 5MM

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PLASTIC INFRARED

LIGHT EMITTING DIODE

QED233

ABSOLUTE MAXIMUM RATINGS

(T A = 25 ° C unless otherwise specified)

QED234

Parameter

Operating Temperature

Storage Temperature

Soldering Temperature (Iron) (2,3,4)

Soldering Temperature (Flow) (2,3)

Continuous Forward Current

Reverse Voltage

Power Dissipation (1)

Peak Forward Current

Symbol

T OPR

T STG

T SOL-I

T SOL-F

I F

V R

P D

I FP

Rating

-40 to +100

-40 to +100

240 for 5 sec

260 for 10 sec

100

5

200

1.5

Unit

° C

° C

° C

° C

mA

V

mW

A

1. Derate power dissipation linearly 2.67 mW/ ° C above 25 ° C.

2. RMA flux is recommended.

3. Methanol or isopropyl alcohols are recommended as cleaning agents.

4. Soldering iron 1/16 ” (1.6mm) minimum from housing.

5. Pulse conditions; tp = 100 μs, T = 10 ms.

ELECTRICAL / OPTICAL CHARACTERISTICS

(T A =25 ° C)

PARAMETER

Peak Emission Wavelength

Spectral Bandwidth

TEST CONDITIONS

I F = 20 mA

I F = 20 mA

DEVICE

ALL

ALL

SYMBOL

PE

—

MIN

—

50

TYP

940

—

MAX

—

nm

UNITS

nm

Temp. Coefficient of

PE

I F = 100 mA

ALL

TC

—

0.2

—

nm/K

Emission Angle

I F = 100 mA

ALL

2

1/2

—

40

—

Deg.

Forward Voltage

Temp. Coefficient of V F

Reverse Current

Radiant Intensity

I F = 100 mA, tp = 20 ms

I F = 100 mA

V R = 5 V

I F = 100 mA, tp = 20 ms

ALL

ALL

ALL

QED233

V F

TC V

I R

I E

—

—

—

10

—

-1.5

—

—

1.6

—

10

50

V

mV/K

μA

mW/sr

QED234

27

—

—

Temp. Coefficient of I E

Rise Time

Fall Time

I F = 20 mA

I F = 100 mA

ALL

ALL

ALL

TC I

t r

t f

—

—

—

-0.6

1000

1000

—

—

—

%/K

ns

www.fairchildsemi.com

2 OF 4

10/31/01 DS300338

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